The research group „GaN Device Technology“ is performing fundamental and application-oriented research on the deposition and characterization of compound and organic semiconductor materials and their electronic and optoelectronic devices. The research goals lie in the development of energy-efficient devices for power electronics, diplays, solid state lighting and organic photovoltaics.
Group III-Nitrides are especially suited for high speed and high power devices in the communication and power electronics. The direct bandgap, which can be tuned from 0.8 eV to 6.2 eV, makes these materials also interesting for light-emitting and laser diodes as well as photovoltaic cells.
Organic semiconductors allow for deposition on large flexible substrates. Therefore applications in the areas of low-cost consumer electronic, photovoltaics, lighting and displays can be targeted here.
The activities are primarily taking place in two locations, where we can rely on state-of-the-art infrastructure and equipment.